10 April 1995 Photoluminescence of porous silicon layers produced with the help of laser radiation
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The time resolved photoluminescence (PL) spectra of nanocrystalline Si layers formed with the help of YAG laser ((lambda) equals 1.06 micrometers , Ep equals 0.3 J, tp equals 2 X 10-4 s) modification of the monocrystalline Si were investigated. PL was excited by pulse nitrogen laser ((lambda) equals 337 nm, tp equals 7 X 10-9 s, Ep equals 2 X 10-5 J). It was established a prominent manifestation of the blue band ((lambda) equals 420 nm). There are two sets of time decays observed in PL relaxation spectra. The fast decays are observed in the wide band from 420 to 700 nm while the slow time decays are observed in wave range from 500 to 850 nm. An analysis of the amplitude and time characteristics of PL spectra allow to conclude that the fast time decays are determined by volume energy levels in nanocrystalline wires with a variable cross-section and with the short lengths conditioned by the laser induced high defects concentration. The slow part of PL kinetics is approximated by stretched exponent, characteristic of disordered systems, has exponential spectra dependence. This attests the predominance of the tunneling mechanism controlling the velocity of recombination. The obtained results count in favor of quantum confinement model of the porous silicon (PS) origin. From practical terms the laser assisted method proposed may be useful for the pattern designed PS layers formation despite of the methods using the photoresist of ion implantation.
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Leonid L. Fedorenko, Leonid L. Fedorenko, Sergey V. Svechnikov, Sergey V. Svechnikov, E. B. Kaganovich, E. B. Kaganovich, A. D. Sardarly, A. D. Sardarly, S. P. Dikiy, S. P. Dikiy, S. V. Baranetz, S. V. Baranetz, "Photoluminescence of porous silicon layers produced with the help of laser radiation", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206286; https://doi.org/10.1117/12.206286


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