One of the major advantages of pulsed laser deposition (PLD) for thin- film growth is the use of simply prepared solid targets. Especially for our work with CdTe-related materials in photovoltaics, target preparation by cold pressing from high purity powders works well, partly because the II-VI semiconductors such as CdTe, CdS, and ZnTe do not create serious problems with particulate generation in the PLD plume. Thus we have used mixtures of these binary compounds to produce ternary alloy films with good results. These alloy films are being used to produce band-gap-graded structures in PV cells. In addition, the PLD technique lends itself readily to the preparation of doped films again through appropriate target mixing such as elemental copper mixed into ZnTe or elemental indium mixed into CdS. In addition, doping from the vapor phase by reactive deposition of CdTe in the presence of small pressures of O2 has been successful in reducing the normally very high resistivity of the polycrystalline CdTe Films. Electrical measurements, Raman and photoluminescence, x-ray diffraction, and scanning electron microscopy results from these materials will be presented.