10 April 1995 Raman scattering investigations of CuInSe2 films deposited by coevaporation and laser ablation
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Abstract
Thin films of CuInSe2 (CIS) were deposited on soda-lime float glass with a molybdenum back contact by means of coevaporation and Pulsed Laser Deposition (PLD). The resulting films have been characterized by Raman scattering, SEM (Secondary Electron Microscopy), EDX (Energy Dispersive X-ray) and XRD (X-Ray Diffraction). Raman analysis is a versatile tool and is particularly suited for investigations of the near surface film structure and defect chemistry. Raman measurements of indium-rich coevaporated thin films indicate an ordered defect structure. Furthermore the Raman spectra are strongly influenced by texture properties. This makes it more difficult to assess the free carrier concentration in CIS films. Raman spectra of coevaporated CIS films and films deposited by PLD are compared.
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M. Klose, R. Schaffler, Gert Irmer, Michael Brieger, D. Schmid, Hans Werner Schock, "Raman scattering investigations of CuInSe2 films deposited by coevaporation and laser ablation", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206254; https://doi.org/10.1117/12.206254
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