10 April 1995 Realization of Si1-x-yGexCy/Si heterostructures by pulsed-laser-induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)
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Abstract
Si1-x-yGexCy / Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C+ implanted pseudomorphic Si0.84/Ge(subscript 0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channeling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy, X-ray diffraction and Raman spectroscopy. First results show that laser induced epitaxy is effective, provided that laser fluence exceeds a threshold for which the melted depth is larger than the initial SiGeC layer. In addition, carbon incorporation in substitutional sites is demonstrated.
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Jacques Boulmer, Jacques Boulmer, A. Desmur-Larre, A. Desmur-Larre, C. Guedj, C. Guedj, D. Debarre, D. Debarre, Philippe Boucaud, Philippe Boucaud, Francois H. Julien, Francois H. Julien, Elieser Finkman, Elieser Finkman, Keith A. Nugent, Keith A. Nugent, R. Laval, R. Laval, J.-B. Ozenne, J.-B. Ozenne, H. Yang, H. Yang, D. Bouchier, D. Bouchier, Christian Godet, Christian Godet, Pere Roca i Cabarrocas, Pere Roca i Cabarrocas, G. Calvarin, G. Calvarin, C. Clerc, C. Clerc, } "Realization of Si1-x-yGexCy/Si heterostructures by pulsed-laser-induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206273; https://doi.org/10.1117/12.206273
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