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20 April 1995 NIR high-efficiency subwavelength diffractive structures in semiconductors
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Abstract
We have fabricated sub-wavelength diffractive optical elements with binary phase profiles for operation at 975 nm. Blazed transmission gratings with minimum features 63 nm wide were designed by using rigorous coupled-wave analysis and fabricated by direct-write e-beam lithography and reactive ion beam etching in gallium arsenide. Transmission measurements show 85% diffraction efficiency into the first order. Anti-reflection surfaces, with features 42 nm wide were also designed and fabricated.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert E. Smith, Mial E. Warren, Joel R. Wendt, and G. Allen Vawter "NIR high-efficiency subwavelength diffractive structures in semiconductors", Proc. SPIE 2404, Diffractive and Holographic Optics Technology II, (20 April 1995); https://doi.org/10.1117/12.207462
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