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10 April 1995 7-μm pixel size tapped frame transfer CCD image sensor
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Proceedings Volume 2415, Charge-Coupled Devices and Solid State Optical Sensors V; (1995)
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1995, San Jose, CA, United States
A 512 X 512 frame transfer CCD area array image sensor has been developed. The active area of this sensor is subdivided into 4 sections, each with its own output structure that increases the effective output data rate by a factor of four. With an output data rate of 15 MHz, an aggregate data rate of 60 MHz is obtained. This subdivision of the sensor area has been achieved while maintaining a pixel pitch of 7 micrometers . To obtain this pitch, the sensor employs three phase clocking for both vertical transfer and horizontal readout. A sensitive output structure was developed to sense the reduced charge packets from the small pixels. This output structure has a charge conversion efficiency of 7.85 (mu) V/e. The sensor has an excellent charge transfer efficiency and sensitivity making it ideal for high resolution scanning applications.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David A. Dobson, William D. Washkurak, M. Suhail Agwani, and Savvas G. Chamberlain "7-μm pixel size tapped frame transfer CCD image sensor", Proc. SPIE 2415, Charge-Coupled Devices and Solid State Optical Sensors V, (10 April 1995);


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