14 July 1995 Characterization of aluminum nitride thin films grown by plasma source molecular-beam epitaxy
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Abstract
Aluminum nitride (AlN) thin films are grown by a newly developed plasma source molecular beam epitaxy (PSMBE) system. The films were grown on Al2O3 (1102), Al2O3 (0001), Si (111), and Si (100) substrates. Structural characterization of the films were performed by x-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution electron microscopy (HREM). The XRD pattern indicates highly textured films. Cross-sectional HREM reveals epitaxy on AlN on most substrates. The Si (111) and Al2O3 (0001) plane is lattice matched to the c-plane growth of AlN and the Al2O3 (1102) plane is lattice matched to the a-plane growth of AlN. The optical and thermal properties of these films and studied by ellipsometry and thermal wave analysis. The quality of the films is evidenced by the low optical absorption, bulk-like optical index, and bulk-like thermal conductivity.
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Gregory W. Auner, Gregory W. Auner, Pao-Kuang Kuo, Pao-Kuang Kuo, Y. S. Lu, Y. S. Lu, Zhouling Wu, Zhouling Wu, } "Characterization of aluminum nitride thin films grown by plasma source molecular-beam epitaxy", Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); doi: 10.1117/12.213750; https://doi.org/10.1117/12.213750
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