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14 July 1995 Effect of polyvalent elements impurities on the value of bulk laser damage threshold and UV absorption of KDP single crystals
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Abstract
This paper is devoted to studying the influence of Ca, Si, Pb, and Cr impurities (possessing no absorption bands at the wavelength of acting laser irradiation) on the value of bulk laser damage threshold and UV absorption in KDP single crystals. It is shown that for the investigated concentration range (1 divided by 10-5 1 divided by 10-2 mass% laser damage threshold essentially decreases with raising the concentration of impurity ions in the crystal lattice. The maximal value of the said characteristic (approximately 40 J/cm2) is found to be achieved in the case when the concentration of impurities is not less than 1 divided by 10-5 mass%.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marina I. Kolybayeva, Igor M. Pritula, Viacheslav M. Puzikov, Vitaly I. Salo, Serge V. Garnov, and Sergei M. Klimentov "Effect of polyvalent elements impurities on the value of bulk laser damage threshold and UV absorption of KDP single crystals", Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); https://doi.org/10.1117/12.213738
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