14 July 1995 Electron-beam-induced current study of gallium nitride and diamond materials
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The continual need for microelectronic devices that operate under severe electronic and environmental conditions (high temperature, high frequency, high power, and radiation tolerance) has sustained research in wide bandgap semiconductor materials. The properties suggest these wide bandgap semiconductor materials have tremendous potential for military and commercial applications. High frequency bipolar transistors and field effect transistors, diodes, and short wavelength optical devices have been proposed using these materials. Although research efforts involving the study of transport properties in GaN and diamond have made significant advances, much work is still needed to improve the material quality so that the electrophysical behavior of device structures can be further understood and exploited. Electron beam induced current (EBIC) measurements can provide a method of understanding the transport properties in GaN and diamond. This technique basically consists of measuring the current or voltage transient response to the drift and diffusion of carriers created by a short-duration pulse of radiation. This method differs from other experiemental techniques because it is based on a fast transient electron beam created from a high- speed, laser-pulsed photoemission system.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. D. Cropper, A. D. Cropper, Daniel J. Moore, Daniel J. Moore, Craig J. Scott, Craig J. Scott, Ronald Green, Ronald Green, "Electron-beam-induced current study of gallium nitride and diamond materials", Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); doi: 10.1117/12.213748; https://doi.org/10.1117/12.213748

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