Investigation of Fullerenes for optoelectronic and photonic applications

Howard W. Lee

doi:10.1117/12.213699

14 July 1995 Investigation of Fullerenes for optoelectronic and photonic applications (Abstract Only)

Howard W. Lee

Proceedings Volume 2428, Laser-Induced Damage in Optical Materials: 1994; (1995) https://doi.org/10.1117/12.213699
Event: Laser-Induced Damage in Optical Materials: 1994, 1994, Boulder, CO, United States

Abstract

We present and discuss results outlining the use of fullerenes for optoelectronics and photonics. These applications are particularly compelling with the observation of such promising properties as photoluminescence, electroluminescence, large nonresonant optical nonlinearity, and superconductivity. We focus on nonlinear optical properties and their application to high- speed integrated all-optical switching. We present measurements on the dispersion and dynamics of the nonlinear optical coefficients in the near infrared and the figure of merit for photonic switching, indicating very favorable results. The first demonstration of photonic switching using fullerene thin films as the nonlinear medium is presented. Our results show many advantages of fullerenes and fullerene devices, including the simplicity of processing into guided wave structures for nonlinear integrated optics, large nonlinear coefficients, effectively nonlatency,and potentially terabit/sec operation in the near infrared. Comparisons are made with the fiber optic switching approach. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract No. W-7405-ENG-48.

Citation Download Citation

Howard W. Lee "Investigation of Fullerenes for optoelectronic and photonic applications (Abstract Only)", Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); https://doi.org/10.1117/12.213699

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