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14 July 1995 Picosecond photoconductivity of natural and CVD diamonds
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Abstract
Photoexcitation and recombination of nonequilibrium charge carriers in both natural gemstone diamonds and CVD (chemical vapor deposition) polycrystalline diamond films in UV spectrum regions have been investigated. Transient picosecond photoconductivity technique applied permitted to conduct measurements with the time resolution better than 200 picoseconds and to register a charge carrier concentration value as low as 1020 - 1013 cm-3. The dependencies of photocurrent amplitude as a function of incident laser radiation intensity in the range from 103 to 1010 W/cm2 have been obtained. Charge carrier lifetimes had been measured and charge carrier drift mobility were estimated. It is shown that the electronic properties of high quality thick CVD diamond films are comparable to those of the most perfect natural type IIa crystals. Investigation of Raman and luminescence spectra of diamonds have been performed along with scanning electron microscopy studies to characterize bulk and surface structure of tested specimens.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Serge V. Garnov, Sergej M. Pimenov, Victor G. Ralchenko, Sergei M. Klimentov, Vitali I. Konov, K. G. Korotoushenko, E. D. Obraztsova, S. P. Plotnikova, D. M. Sagatelyan, and Sandor Holly "Picosecond photoconductivity of natural and CVD diamonds", Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); https://doi.org/10.1117/12.213747
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