19 May 1995 EBR900 processes in e-beam and laser beam lithographies for photomask fabrication
Author Affiliations +
Abstract
The performance of EBR900 (Toray) as a resist used for e-beam and laser beam lithographies has been investigated. EBR900 has high sensitivity to both e-beam and laser beam exposures. It has high resolution and good dry-etch durability. The e-beam process was optimized by designing a new type of developer, MA50, which is composed of an amine and an aqueous solution of potassium hydroxide. The addition of the amine was found to be effective in improving the performance with regard to profile, CD uniformity, and defect quality. Its performance is stable (e.g., CD deviation is less than 0.03 micrometers for a shelf time of a month); this makes CD control easier. Its CD linearity in the laser beam process is down to 0.6 micrometers , being better than that in the e-beam one (down to 1.0 micrometers ). Its dissolution rate and conversion yield of the photosensitizer were estimated in order to explain the superiority of the laser process. A comparison of its performance between e-beam and laser beam processes for next generation photomask fabrication was presented. In conclusion, EBR900 meets the requirements for 64 Mb DRAM reticles for the use in e- beam and laser beam lithographies.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masa-aki Kurihara, Minoru Komada, Hisashi Moro-oka, Naoya Hayashi, and Hisatake Sano "EBR900 processes in e-beam and laser beam lithographies for photomask fabrication", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209164; https://doi.org/10.1117/12.209164
PROCEEDINGS
13 PAGES


SHARE
Advertisement
Advertisement
Back to Top