Electron-beam and x-ray lithographic characteristics of the optical resist ARCH

Anthony E. Novembre; Regine G. Tarascon-Auriol; Omkaram Nalamasu; Linus A. Fetter; Kevin J. Bolan; Chester S. Knurek; Norbert Muenzel; Heinz E. Holzwarth

doi:10.1117/12.209189

19 May 1995 Electron-beam and x-ray lithographic characteristics of the optical resist ARCH

Anthony E. Novembre, Regine G. Tarascon-Auriol, Omkaram Nalamasu, Linus A. Fetter, Kevin J. Bolan, Chester S. Knurek, Norbert Muenzel, Heinz E. Holzwarth

Author Affiliations +

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209189
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The multi-component, positive acting, chemically amplified deep-UV ((lambda) equals 248 nm) resist ARCH, has been evaluated for use in proximity x-ray and electron-beam lithography. Characterization of the x-ray lithographic response of ARCH resist using a pulsed laser point source ((lambda) equals 1.4 nm) proximity print stepper resulted in a process producing sub-0.20 micrometers features at a dose of 22 mJ/cm². A time delay study was conducted in the helium environment of the x-ray exposure tool and the results indicate that a > 30 min delay period after exposure produced no change in the resist image profile. Electron- beam exposures using a JEOL JBX 5D-II tool operating at 50 KeV delineated patterns below 0.10 micrometers on silicon. The measured exposure sensitivity was in the range of 8-16 (mu) C/cm². Time delay experiments performed in the vacuum environment of the e-beam exposure tool over a 15 hr. time period resulted in no line size variation. These results suggest that ARCH resist represents a common material platform for the various advanced lithography programs currently under investigation for fabrication of circuits having

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Anthony E. Novembre, Regine G. Tarascon-Auriol, Omkaram Nalamasu, Linus A. Fetter, Kevin J. Bolan, Chester S. Knurek, Norbert Muenzel, and Heinz E. Holzwarth "Electron-beam and x-ray lithographic characteristics of the optical resist ARCH", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209189

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KEYWORDS

X-rays

Lithography

X-ray lithography

Deep ultraviolet

Electron beam lithography

Photoresist processing

Photomasks

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