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19 May 1995 Electron-beam and x-ray lithographic characteristics of the optical resist ARCH
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Abstract
The multi-component, positive acting, chemically amplified deep-UV ((lambda) equals 248 nm) resist ARCH, has been evaluated for use in proximity x-ray and electron-beam lithography. Characterization of the x-ray lithographic response of ARCH resist using a pulsed laser point source ((lambda) equals 1.4 nm) proximity print stepper resulted in a process producing sub-0.20 micrometers features at a dose of 22 mJ/cm2. A time delay study was conducted in the helium environment of the x-ray exposure tool and the results indicate that a > 30 min delay period after exposure produced no change in the resist image profile. Electron- beam exposures using a JEOL JBX 5D-II tool operating at 50 KeV delineated patterns below 0.10 micrometers on silicon. The measured exposure sensitivity was in the range of 8-16 (mu) C/cm2. Time delay experiments performed in the vacuum environment of the e-beam exposure tool over a 15 hr. time period resulted in no line size variation. These results suggest that ARCH resist represents a common material platform for the various advanced lithography programs currently under investigation for fabrication of circuits having
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony E. Novembre, Regine G. Tarascon-Auriol, Omkaram Nalamasu, Linus A. Fetter, Kevin J. Bolan, Chester S. Knurek, Norbert Muenzel, and Heinz E. Holzwarth "Electron-beam and x-ray lithographic characteristics of the optical resist ARCH", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209189
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