19 May 1995 Electron-beam and x-ray lithographic characteristics of the optical resist ARCH
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The multi-component, positive acting, chemically amplified deep-UV ((lambda) equals 248 nm) resist ARCH, has been evaluated for use in proximity x-ray and electron-beam lithography. Characterization of the x-ray lithographic response of ARCH resist using a pulsed laser point source ((lambda) equals 1.4 nm) proximity print stepper resulted in a process producing sub-0.20 micrometers features at a dose of 22 mJ/cm2. A time delay study was conducted in the helium environment of the x-ray exposure tool and the results indicate that a > 30 min delay period after exposure produced no change in the resist image profile. Electron- beam exposures using a JEOL JBX 5D-II tool operating at 50 KeV delineated patterns below 0.10 micrometers on silicon. The measured exposure sensitivity was in the range of 8-16 (mu) C/cm2. Time delay experiments performed in the vacuum environment of the e-beam exposure tool over a 15 hr. time period resulted in no line size variation. These results suggest that ARCH resist represents a common material platform for the various advanced lithography programs currently under investigation for fabrication of circuits having
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony E. Novembre, Anthony E. Novembre, Regine G. Tarascon-Auriol, Regine G. Tarascon-Auriol, Omkaram Nalamasu, Omkaram Nalamasu, Linus A. Fetter, Linus A. Fetter, Kevin J. Bolan, Kevin J. Bolan, Chester S. Knurek, Chester S. Knurek, Norbert Muenzel, Norbert Muenzel, Heinz E. Holzwarth, Heinz E. Holzwarth, } "Electron-beam and x-ray lithographic characteristics of the optical resist ARCH", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209189; https://doi.org/10.1117/12.209189

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