19 May 1995 Geometry of x-ray point source proximity printing, Part I: linewidth control
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Abstract
In this paper the relationship between exposure geometry and intrafield linewidth variations is investigated. The results indicate that (1) minimum linewidth occurs at the center of field where the optical axis intersects the mask/wafer planes, (2) width of vertical and horizontal lines increase linearly with site coordinates x and y, respectively, (3) source-mask field centering errors increase the intrafield linewidth variation, (4) linewidth measurement accuracy is site-dependent because of sloping effect that vary with x and y but remain constant along a column or row, and (5) current intrafield linewidth data characterizing linewidth control in x-ray point-source proximity printing systems.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter A. Hollanda, "Geometry of x-ray point source proximity printing, Part I: linewidth control", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209174; https://doi.org/10.1117/12.209174
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