19 May 1995 Geometry of x-ray point source proximity printing, Part I: linewidth control
Author Affiliations +
In this paper the relationship between exposure geometry and intrafield linewidth variations is investigated. The results indicate that (1) minimum linewidth occurs at the center of field where the optical axis intersects the mask/wafer planes, (2) width of vertical and horizontal lines increase linearly with site coordinates x and y, respectively, (3) source-mask field centering errors increase the intrafield linewidth variation, (4) linewidth measurement accuracy is site-dependent because of sloping effect that vary with x and y but remain constant along a column or row, and (5) current intrafield linewidth data characterizing linewidth control in x-ray point-source proximity printing systems.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter A. Hollanda, Peter A. Hollanda, } "Geometry of x-ray point source proximity printing, Part I: linewidth control", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209174; https://doi.org/10.1117/12.209174


Near-field x-ray lithography to 15 nm
Proceedings of SPIE (May 19 2004)
Optical Advances In Projection Photolithography
Proceedings of SPIE (September 05 1978)
ACLV control in x-ray lithography
Proceedings of SPIE (June 04 1998)
Business dynamics of lithography at very low k1 factors
Proceedings of SPIE (July 25 1999)
Life after the 256 Mb DRAM e beam mask...
Proceedings of SPIE (December 06 1994)

Back to Top