Magnification correction for proximity x-ray lithography

Alek C. Chen; J. P. Silverman

doi:10.1117/12.209154

19 May 1995 Magnification correction for proximity x-ray lithography

Alek C. Chen, J. P. Silverman

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209154
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

A magnification mismatch between exposures levels represents a significant source of potential overlay errors in proximity x-ray lithography. We describe an approach using mechanical forces applied to the x-ray mask to adjust the relative magnification of the mask and wafer. Experiments have been performed which demonstrate the potential for magnification adjustment of more than 10 ppm. In addition, finite element modeling been used to understand the experimental results and develop an optimized arrangement of forces so as to provide magnification adjustment while adding virtually no distortion.

Citation Download Citation

Alek C. Chen and J. P. Silverman "Magnification correction for proximity x-ray lithography", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209154

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available