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19 May 1995 Magnification correction for proximity x-ray lithography
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Abstract
A magnification mismatch between exposures levels represents a significant source of potential overlay errors in proximity x-ray lithography. We describe an approach using mechanical forces applied to the x-ray mask to adjust the relative magnification of the mask and wafer. Experiments have been performed which demonstrate the potential for magnification adjustment of more than 10 ppm. In addition, finite element modeling been used to understand the experimental results and develop an optimized arrangement of forces so as to provide magnification adjustment while adding virtually no distortion.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alek C. Chen and J. P. Silverman "Magnification correction for proximity x-ray lithography", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209154
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