19 May 1995 Optical system design issues in development of projection camera for EUV lithography
Author Affiliations +
Abstract
Optical system design issues are described in development of a four- mirror 4x reduction ring-field system for EUV projection lithography at 13 nm wavelength.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tanya E. Jewell, "Optical system design issues in development of projection camera for EUV lithography", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209170; https://doi.org/10.1117/12.209170
PROCEEDINGS
7 PAGES


SHARE
KEYWORDS
Distortion

Optical design

Mirrors

Aspheric lenses

Extreme ultraviolet lithography

Photomasks

Semiconducting wafers

RELATED CONTENT

EUV optical design for a 100-nm CD imaging system
Proceedings of SPIE (June 05 1998)
Design of EUVL camera with large numerical aperture
Proceedings of SPIE (July 21 2000)
Design of imaging system for EUVL
Proceedings of SPIE (November 01 1997)

Back to Top