Printability of substrate and absorber defects on extreme ultraviolet lithographic masks

Khanh B. Nguyen; Avijit K. Ray-Chaudhuri; Daniel A. Tichenor; Richard H. Stulen; Rodney P. Nissen; Kurt W. Berger; Phillip H. Paul; Donald M. Tennant; Linus A. Fetter; David L. Windt; John E. Bjorkholm; Richard R. Freeman

doi:10.1117/12.209169

19 May 1995 Printability of substrate and absorber defects on extreme ultraviolet lithographic masks

Khanh B. Nguyen, Avijit K. Ray-Chaudhuri, Daniel A. Tichenor, Richard H. Stulen, Rodney P. Nissen, Kurt W. Berger, Phillip H. Paul, Donald M. Tennant, Linus A. Fetter, David L. Windt, John E. Bjorkholm, Richard R. Freeman

Author Affiliations +

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209169
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

This paper reports results from a study of defect printability for extreme ultraviolet lithographic masks (EUVL). Imaging experiments were preformed with an EUVL mask containing programmed defects. The mask contained defects of different sizes and locations with respect to the absorber patterns. Since an EUVL mask consists of absorber layer patterned above a multilayer-coated substrate, both substrate defects, located below the reflective coating, and absorber defects, located above the reflective coating, were included on the programmed defect mask. The absorber layer was patterned using a process previously described by Tennant et al. Imaging was performed using a 10X Schwarzschild camera operating at 13.4 nm with a numerical aperture of 0.08, corresponding to a Rayleigh resolution of 0.1 micrometers . This system has an effective exposure field of 0.4 mm diameter. Both positive-tone and negative-tone resists were used. Measurements of the defect-induced linewidth variations on the printed resist lines were performed with scanning electron microscopy (SEM) and atomic force microscopy (AFM). Results show that substrate defects are more printable compared to defects of the same sizes located above the reflective coating. In addition, defects located in the center of a clear region in lines-and- space pattern are more printable compared to those located nearer to the absorber lines.

Citation Download Citation

Khanh B. Nguyen, Avijit K. Ray-Chaudhuri, Daniel A. Tichenor, Richard H. Stulen, Rodney P. Nissen, Kurt W. Berger, Phillip H. Paul, Donald M. Tennant, Linus A. Fetter, David L. Windt, John E. Bjorkholm, and Richard R. Freeman "Printability of substrate and absorber defects on extreme ultraviolet lithographic masks", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209169

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photomasks

Coating

Extreme ultraviolet lithography

Reflectivity

Atomic force microscopy

Lithography

Scanning electron microscopy

Show All Keywords

Keywords/Phrases

Search In:

Publication Years