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19 May 1995 Resist contrast requirement for sub-0.25-μm lithography
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Abstract
In this paper, the effect of resist contrast on the exposure latitude, printing bias, and dark erosion are discussed in the context of proximity x-ray lithography. Positive chemically amplified resists are studied. Both experimental and simulation results show that an exposure latitude of 28% can be obtained for 0.16 micrometers dense lines and a 0.36 micrometers pitch using point source x-ray lithography with a 25 micrometers proximity gap.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry Z.Y. Guo, Anthony E. Novembre, Herschel M. Marchman, Joseph A. Abate, John Frackoviak, David N. Tomes, Allen G. Timko, and George K. Celler "Resist contrast requirement for sub-0.25-μm lithography", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209180
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