19 May 1995 Study of EUV contact lithography with a compact laser plasma source
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It is performed by optimizing the source that experiments to demonstrate the feasibility of a small laser for EUV contact lithography. Using copper, steel and tungsten targets, the depth of development of DCPA resists exposed through 50 1/mm, 100 1/mm Cu free-standing nets are obtained for times from 10 to 40 min. A method of adding a pinhole is used to estimate the qualities of pattern of developed resist.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yubin Guo, Yubin Guo, Futian Li, Futian Li, } "Study of EUV contact lithography with a compact laser plasma source", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209182; https://doi.org/10.1117/12.209182


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