19 May 1995 Sub-0.1-μm NMOS transistors fabricated using point-source x-ray lithography
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As transistor features shrink into the deep submicron range, a corresponding reduction in the optical wavelength used to pattern such features has also continued. Currently, advanced optical steppers found in ULSI production applications operate at a wavelength of 365 nm with 248 nm optical lithography present in process development facilities and 193 nm lithography in the early stages of research. By reducing the wavelength still further to below 1.5 nm, x-ray lithography represents the ultimate limit of this paradigm. In this paper we present the experimental results of the first MOSFETs ever fabricated using a laser plasma-source x-ray stepper. These transistors were patterned using a mix-and-match lithography scheme where the gate level was printed using a 1.4 nm plasma-source x-ray stepper while the other layers were patterned using an optical stepper operating at a wavelength of 248 nm (DUV). The minimum gate length of these transistors is 0.12 micrometers with an effective channel length of 75 nm.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gee E. Rittenhouse, Gee E. Rittenhouse, William M. Mansfield, William M. Mansfield, Avi Kornblit, Avi Kornblit, David N. Tomes, David N. Tomes, Raymond A. Cirelli, Raymond A. Cirelli, John Frackoviak, John Frackoviak, George K. Celler, George K. Celler, } "Sub-0.1-μm NMOS transistors fabricated using point-source x-ray lithography", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209191; https://doi.org/10.1117/12.209191


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