Advanced photoresist for high-throughput i-line stepper applications

Anthony Canize; Walter Spiess; Stanley A. Ficner; Ping-Hung Lu; Ralph R. Dammel; Yvette M. Perez

doi:10.1117/12.210394

9 June 1995 Advanced photoresist for high-throughput i-line stepper applications

Anthony Canize, Walter Spiess, Stanley A. Ficner, Ping-Hung Lu, Ralph R. Dammel, Yvette M. Perez

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210394
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The use of i-line photolithography is finding increased importance in generating today's advanced semiconductor devices. The requirements in this area have led to the recent development of wide field i-line steppers whose large field sizes permit higher device throughput. The introductions of these wide field i-line steppers generate additional demands on the photoresist used in the manufacturing process. This paper describes the development of an advanced i-line photoresist for use in high-throughput applications. The requirements of this photoresist are high photospeed of the order of 75 mJ/cm² to achieve targeted throughput requirements at low lamp power densities, high resolution of approximately 0.80 micrometers at NA equals 0.24 to satisfy device critical dimension requirements, and high resistance to thermal flow to permit further processing stages. The photoresist's formulation and processing were optimized to produce the desired performance characteristics. Exposure, focus latitude, photosensitivity, and resistance to thermal flow were determined and correlated with resin dissolution characteristics, relative photosensitizer concentration, softbake and post exposure bake temperatures.

Citation Download Citation

Anthony Canize, Walter Spiess, Stanley A. Ficner, Ping-Hung Lu, Ralph R. Dammel, and Yvette M. Perez "Advanced photoresist for high-throughput i-line stepper applications", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210394

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
11 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photoresist materials

Picture Archiving and Communication System

Manufacturing

Photoresist developing

Lithography

Optical lithography

Resistance

Show All Keywords

Keywords/Phrases

Search In:

Publication Years