9 June 1995 Advanced photoresist for high-throughput i-line stepper applications
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Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995); doi: 10.1117/12.210394
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States
Abstract
The use of i-line photolithography is finding increased importance in generating today's advanced semiconductor devices. The requirements in this area have led to the recent development of wide field i-line steppers whose large field sizes permit higher device throughput. The introductions of these wide field i-line steppers generate additional demands on the photoresist used in the manufacturing process. This paper describes the development of an advanced i-line photoresist for use in high-throughput applications. The requirements of this photoresist are high photospeed of the order of 75 mJ/cm2 to achieve targeted throughput requirements at low lamp power densities, high resolution of approximately 0.80 micrometers at NA equals 0.24 to satisfy device critical dimension requirements, and high resistance to thermal flow to permit further processing stages. The photoresist's formulation and processing were optimized to produce the desired performance characteristics. Exposure, focus latitude, photosensitivity, and resistance to thermal flow were determined and correlated with resin dissolution characteristics, relative photosensitizer concentration, softbake and post exposure bake temperatures.
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Anthony Canize, Walter Spiess, Stanley A. Ficner, Ping-Hung Lu, Ralph R. Dammel, Yvette M. Perez, "Advanced photoresist for high-throughput i-line stepper applications", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210394; https://doi.org/10.1117/12.210394
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KEYWORDS
Photoresist materials

Picture Archiving and Communication System

Manufacturing

Photoresist developing

Lithography

Optical lithography

Resistance

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