9 June 1995 Considerations in the development of deep-UV photoresist materials and processes
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Abstract
Over the past several years the literature has accumulated a number of publications in the discussion of materials and process problems associated with DUV photoresist materials. Many authors have discussed a number of issues including contaminants that can adversely effect performance, the addition of `suicide' bases to enhance stability and issues related to manufacturing implementation. The requirement to overcome the obstacles that can reduce this technology's viability to become the workhorse of future semiconductor programs is similar. Unfortunately, there are a number of additional concerns that are unique to photoresist development and manufacturing implementation. Developments in negative resists have demonstrated a significant role in the production of semiconductors and their ease of use over their predecessors has created a higher level of acceptance in the semiconductor fab. Additional developments in positive tone deep ultraviolet resist systems over recent predecessor's has eliminated some of the problems associated with image stability and substrate compatibility. Additionally, stepper and track manufacturers have researched further safeguards in the filtration and neutralization of contaminants that adversely effect chemically amplified systems. In this paper the author discusses issues related to materials concerns for positive and negative DUV photoresists. Issues such as reflectivity control, etch concerns, process control for positive and negative photoresist, fab space considerations, and quality control for DUV photoresists for 0.25 micrometers manufacturing are discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Will Conley, "Considerations in the development of deep-UV photoresist materials and processes", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210340; https://doi.org/10.1117/12.210340
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