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9 June 1995 Dielectric and chemical characteristics of electron-beam-cured photoresist
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This paper investigates the dielectric properties and chemical changes occurring in electron beam cured photoresist and how they compare with photoresist cured with standard thermal bake. The material used in the investigation is AZ P4620, a positive tone photoresist based on diazonapthoquinone (DNQ)/novolak chemistry and formulated mostly for thick film applications. The photoresist was spun on silicon wafers and exposed at different doses using an electron beam curing system. The dielectric properties and chemical changes of the exposed films were then evaluated and compared with photoresist films cured with a standard thermal cure. The dielectric properties that were evaluated were dielectric constant and breakdown voltage. The chemical changes were analyzed by FT-IR. For the electron beam cured photoresist, preliminary results indicate that the photoactive compound undergoes both decomposition and crosslinking during the process. The dielectric properties as well as the chemical changes as a function of dose are discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ernesto S. Sison, M. Dalil Rahman, Dana L. Durham, James Hermanowski, Matthew F. Ross, and Michael J. Jennison "Dielectric and chemical characteristics of electron-beam-cured photoresist", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995);

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