Translator Disclaimer
9 June 1995 Dry resist material on base of perylene tetracarboxylic acid derivatives for laser lithography
Author Affiliations +
Abstract
Vacuum vapor deposited films (0.8 - 1.2 micrometers thickness) of perylene-3,4,9,10- tetracarboxylic acid (PTA) derivatives studied permit masks to be produced by laser vacuum projection lithography (LVPL) technique. The masks have submicron elements (0.4 - 0.6 micrometers ) and selectivity ranging from 7 to 15 during plasma chemical etching of Si, SiO2 and Al. Films based on diphenyl- and di-(p-chlorophenyl)-diimides possess the best lithographic and masking properties.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir Enokovich Agabekov, Victor Adamovich Azarko, and Olga Petrovna Nevdakh "Dry resist material on base of perylene tetracarboxylic acid derivatives for laser lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210404
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top