Effect of dissolution inhibitors on the dissolution characteristics of chemically amplified positive-tone electron beam resist

Hideo Horibe; Teruhiko Kumada; Shigeru Kubota; Yoshika Kimura

doi:10.1117/12.210362

9 June 1995 Effect of dissolution inhibitors on the dissolution characteristics of chemically amplified positive-tone electron beam resist

Hideo Horibe, Teruhiko Kumada, Shigeru Kubota, Yoshika Kimura

Author Affiliations +

Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210362
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The chemical amplification resist system composed of partially tBOC-protected PVP, a dissolution inhibitor, and an acid generator are investigated as EB resists. As dissolution inhibitors, hydroquinone protected with tert-butoxycarbonyl group (B-HQ) and isophthalic acid protected with tert-butyl group (B-IP) are utilized. It is found that dissolution rate of the resist consisting of B-IP is faster than that of B-HQ in the exposed area. B-HQ and B-IP as dissolution inhibitors convert into HQ and IP as dissolution promoters after exposure, respectively. The pKa of IP is smaller than that of HQ. It is considered that the acidity of IP is higher than that of HQ, so the ability of the dissolution promotion of IP is much larger than that of HQ. IP enhances the solubility of the matrix resin to the alkaline developer larger than HQ. The resist consisting of B-IP has a high dissolution rate ratio between the exposed and unexposed areas, so it is considered that it results in a much improved patten profile. A 0.14 micrometers lines-and-spaces pattern is successfully fabricated at 17.5 (mu) C/cm² using 50 keV. EB.

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Hideo Horibe, Teruhiko Kumada, Shigeru Kubota, and Yoshika Kimura "Effect of dissolution inhibitors on the dissolution characteristics of chemically amplified positive-tone electron beam resist", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210362

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