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9 June 1995 Effects of substrate treatment in positive chemically amplified resist
Akihiro Usujima; Kazuki Tago; Akira Oikawa; Kenji Nakagawa
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Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210359
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States
Abstract
We fabricated resist patterns on a silicon nitride (Si3N4) substrate using a KrF excimer laser stepper and a positive chemically amplified resist. The cross-sectional views of the resist patterns revealed `footing,' so we carried out experiments to find the cause of this. We investigated the relationship between the resist profile and the Si3N4 film thickness, or the storage time of the substrate. We also tried to improve the footing profile with some substrate treatments. As a result, we revealed that substrate treatment using oxygen plasma is extremely effective in diminishing footing. Therefore, the effects of substrate treatment were investigated using electron spectroscopy for chemical analysis (ESCA) and gas-chromatograph mass-spectrometry (GC-MS). From these results, we studied the cause of footing.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Akihiro Usujima, Kazuki Tago, Akira Oikawa, and Kenji Nakagawa "Effects of substrate treatment in positive chemically amplified resist", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210359
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