9 June 1995 Effects of substrate treatment in positive chemically amplified resist
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Abstract
We fabricated resist patterns on a silicon nitride (Si3N4) substrate using a KrF excimer laser stepper and a positive chemically amplified resist. The cross-sectional views of the resist patterns revealed `footing,' so we carried out experiments to find the cause of this. We investigated the relationship between the resist profile and the Si3N4 film thickness, or the storage time of the substrate. We also tried to improve the footing profile with some substrate treatments. As a result, we revealed that substrate treatment using oxygen plasma is extremely effective in diminishing footing. Therefore, the effects of substrate treatment were investigated using electron spectroscopy for chemical analysis (ESCA) and gas-chromatograph mass-spectrometry (GC-MS). From these results, we studied the cause of footing.
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Akihiro Usujima, Akihiro Usujima, Kazuki Tago, Kazuki Tago, Akira Oikawa, Akira Oikawa, Kenji Nakagawa, Kenji Nakagawa, "Effects of substrate treatment in positive chemically amplified resist", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210359; https://doi.org/10.1117/12.210359
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