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9 June 1995 Evaluation of chemically amplified resist based on adamantyl methacrylate for 193-nm lithography
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An ArF single layer resist based on alicyclic polymer has been developed. Our work centers on improving the solubility of the base polymer in an aqueous base solution. The solubility is the most significant point in using alicyclic polymer. A suitable developer is obtained by adding isopropyl alcohol to the standard TMAH solution with a proper mixing ratio. This mixture greatly enhances the dissolution rate and allows the alicyclic polymer to act as a highly sensitive resist. Over-top coating has also been used to improve the pattern profile. We applied these processes to a resist based on a copolymer of 3-oxocyclohexyl methacrylate and adamantyl methacrylate. The results of ArF lithography are encouraging. There is a high sensitivity of about 10 mJ/cm2, and a high resolution of 0.17 micrometers lines and spaces is achieved. This shows that by enhancing the solubility the lithographic characteristics of the resist based on the alicyclic polymer are effectively improved.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Takahashi, Satoshi Takechi, Yuko Kaimoto, Isamu Hanyu, Naomichi Abe, and Koji Nozaki "Evaluation of chemically amplified resist based on adamantyl methacrylate for 193-nm lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995);

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