9 June 1995 High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography
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Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995); doi: 10.1117/12.210357
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States
Abstract
This paper describes the silylation properties and the lithographic performance of ArF (193 nm) surface imaging process with bis(dimethylamino)methylsilane [B(DMA)MS]. The silicon concentration of silylated region with B(DMA)MS in liquid phase is much higher (2 times) than that for the conventional silylation with dimethylsilyldimethylamine (DMSDMA) in vapor phase. The excellent resolution of 0.12 micrometers L/S and practical DOF (1.0 micrometers in a range for 0.18 micrometers L/S) have been achieved using ArF exposure system with a conventional binary mask under a normal illumination. Further, the resolution of 0.088 micrometers has been obtained with a Levenson-type phase shifting mask.
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Katsumi Maeda, Takeshi Ohfuji, Naoaki Aizaki, Etsuo Hasegawa, "High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210357; https://doi.org/10.1117/12.210357
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KEYWORDS
Silicon

Image processing

Lithography

Photomasks

Liquids

Excimer lasers

Phase shifting

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