9 June 1995 Modeling of a resist technology for sub-100-nm structuring
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An intralevel mix match resist technology is described using modeling and simulation methods. The two dimensional description of the process contains a Monte-Carlo calculation for the e-beam exposure, a model for the interaction of electrons with the resist, a simulation of the i-line exposure, a calculation for the silylation and for a final dry development step (O2-RIE). The simulation is supported by experiments where a structuring down to 50 nm is achieved.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulrich A. Jagdhold, Ulrich A. Jagdhold, Lothar Bauch, Lothar Bauch, } "Modeling of a resist technology for sub-100-nm structuring", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210417; https://doi.org/10.1117/12.210417


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