Modeling of a resist technology for sub-100-nm structuring

Ulrich A. Jagdhold; Lothar Bauch

doi:10.1117/12.210417

9 June 1995 Modeling of a resist technology for sub-100-nm structuring

Ulrich A. Jagdhold; Lothar Bauch

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Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210417
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

An intralevel mix match resist technology is described using modeling and simulation methods. The two dimensional description of the process contains a Monte-Carlo calculation for the e-beam exposure, a model for the interaction of electrons with the resist, a simulation of the i-line exposure, a calculation for the silylation and for a final dry development step (O2-RIE). The simulation is supported by experiments where a structuring down to 50 nm is achieved.

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Ulrich A. Jagdhold, Ulrich A. Jagdhold, Lothar Bauch, Lothar Bauch, } "Modeling of a resist technology for sub-100-nm structuring", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210417; https://doi.org/10.1117/12.210417

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