9 June 1995 New positive-tone deep-UV photoresist based on poly(4-hydroxystyrene) and an acid labile protecting group
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Abstract
Conventional acid catalyzed, chemically amplified DUV photoresists are susceptible to environmental contamination and post exposure delay effects resulting in `T-topping' and linewidth variation. These phenomena are directly relatable to uncontrolled diffusion of the photoactive acid generator within the photoresist or from the diffusion of basic contaminants into the resist. The diffusion process can be controlled by a combination of materials and processing optimization. This paper describes a new positive tone DUV photoresist based on poly(4-hydroxystyrene) protected with the isopropyloxycarbonyl (i-POC) functionality. This protecting group is considerably less acid labile than the tert-butyloxycarbonyl (t-BOC) group and the resulting polymer is considerably more thermally stable than a t-BOC protected poly(4-hydroxystyrene). As such, the i-POC based polymer is more amenable to processing at higher temperatures.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James T. Fahey, James T. Fahey, Will Conley, Will Conley, William R. Brunsvold, William R. Brunsvold, Dominic C. Yang, Dominic C. Yang, Wayne M. Moreau, Wayne M. Moreau, George M. Jordhamo, George M. Jordhamo, Steve Pratt, Steve Pratt, Dale M. Crockatt, Dale M. Crockatt, George J. Hefferon, George J. Hefferon, Robert L. Wood, Robert L. Wood, } "New positive-tone deep-UV photoresist based on poly(4-hydroxystyrene) and an acid labile protecting group", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210419; https://doi.org/10.1117/12.210419
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