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9 June 1995 Optimization of a 193-nm silylation process for sub-0.25-um lithography
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We have optimized a positive-tone silylation process using polyvinylphenol resist and dimethylsilyldimethylamine as the silylating agent. Imaging quality and process latitude have been evaluated at 193 nm using a 0.5-NA SVGL prototype exposure system. A low- temperature dry etch process was developed that produces vertical resist profiles resulting in large exposure and defocus latitudes, linearity of gratings down to 0.175 micrometers , and resolution of 0.15-micrometers gratings and isolated lines.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Susan C. Palmateer, Roderick R. Kunz, Mark W. Horn, Anthony R. Forte, and Mordechai Rothschild "Optimization of a 193-nm silylation process for sub-0.25-um lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995);

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