9 June 1995 Optimization of a 193-nm silylation process for sub-0.25-um lithography
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Abstract
We have optimized a positive-tone silylation process using polyvinylphenol resist and dimethylsilyldimethylamine as the silylating agent. Imaging quality and process latitude have been evaluated at 193 nm using a 0.5-NA SVGL prototype exposure system. A low- temperature dry etch process was developed that produces vertical resist profiles resulting in large exposure and defocus latitudes, linearity of gratings down to 0.175 micrometers , and resolution of 0.15-micrometers gratings and isolated lines.
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Susan C. Palmateer, Susan C. Palmateer, Roderick R. Kunz, Roderick R. Kunz, Mark W. Horn, Mark W. Horn, Anthony R. Forte, Anthony R. Forte, Mordechai Rothschild, Mordechai Rothschild, } "Optimization of a 193-nm silylation process for sub-0.25-um lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210356; https://doi.org/10.1117/12.210356
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