9 June 1995 Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer
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Abstract
A new positive chemically amplified resist which consists of a novel photoacid generator NEALS (new alkylsulfonium salt) and methacrylate terpolymer with tricyclodecanyl group (TCDA) has been developed. NEALS shows good thermal stability up to 151 degree(s)C, high transparency and high acid generation efficiency for an ArF excimer laser exposure. A new base polymer with TCDA groups demonstrated high transparency (69.3%/micrometers ), high thermal stability up to 141 degree(s)C, a good dry-etching resistance and high solubility for an aqueous base (tetramethylammonium hydroxide) developer. A 0.20 micrometers lines and spaces pattern has been resolved using an ArF excimer laser exposure system (NA equals 0.55).
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Kaichiro Nakano, Kaichiro Nakano, Katsumi Maeda, Katsumi Maeda, Shigeyuki Iwasa, Shigeyuki Iwasa, Takeshi Ohfuji, Takeshi Ohfuji, Etsuo Hasegawa, Etsuo Hasegawa, } "Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210354; https://doi.org/10.1117/12.210354
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