Use of wafer curvature measurement (WCM) techniques in the determination of the process window of positive DUV resists

Patrick Jean Paniez; Andre Schiltz

doi:10.1117/12.210366

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9 June 1995 Use of wafer curvature measurement (WCM) techniques in the determination of the process window of positive DUV resists

Patrick Jean Paniez, Andre Schiltz

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Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210366
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The glass transition temperature (Tg) is related to the two main concerns encountered with chemically amplified resists, namely delay-time and contamination effects. However, Tg is often convoluted with the deprotection reaction and cannot be determined using conventional thermal analysis techniques (e.g., DSC). This problem can nevertheless be circumvented using the wafer curvature measurement technique (WCM). Thus, DSC and WCM appear to be complementary techniques for the complete thermal characterization of DUV resists. Each technique provides one of the two temperature boundaries of an optimum process window. Various DUV positive resists, representative of different cases, are investigated.

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Patrick Jean Paniez and Andre Schiltz "Use of wafer curvature measurement (WCM) techniques in the determination of the process window of positive DUV resists", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210366

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