9 June 1995 Vacuum photoresists on a base of phenoxazine and their lithographic properties
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The lithographic properties of the vacuum vapour deposited thin films based on the benzo[a]phenoxazine derivatives applied in the "all-dry" lithography process with laser patterning (2 =266nm) have been studied. As shown, film sensitivity and resolution, line-edge profile, dry etch resistance and stability under storage and ion implantation depend highly on the chemical structure of the side substitutes. It was found that the treatment of the films with B and p ions with dose equal to or more than 1.8*10 'ion/cm2 and energy equal to 30 keV results in the formation of thin carbonized surface film layer. Its chemical structure includes phosphorous compounds such as PhP3, (PhO)3P0, (PhO)3P in the case of P ion treatment. Modified films display higher dry etch resistance. The fluorination of the vacuum vapour deposited and modified films in C3F8 plasma is under consideration. Keywords: vacuum vapour deposited organic films, laser photolithography, film surface modification, line-edge element profile, etch resistance, ion implantation.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir Enokovich Agabekov, Vladimir Enokovich Agabekov, Olga Evgenyevna Ignasheva, Olga Evgenyevna Ignasheva, Yurii Ivanovich Gudimenko, Yurii Ivanovich Gudimenko, Vladimir N. Belyatsky, Vladimir N. Belyatsky, } "Vacuum photoresists on a base of phenoxazine and their lithographic properties", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); doi: 10.1117/12.210403; https://doi.org/10.1117/12.210403

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