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22 May 1995 CD control using latent image for lithography
Taichi Koizumi; Takahiro Matsuo; Masayuki Endo; Masaru Sasago
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Proceedings Volume 2439, Integrated Circuit Metrology, Inspection, and Process Control IX; (1995) https://doi.org/10.1117/12.209226
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States
Abstract
As a design rule of LSI device gets smaller, critical dimension (CD) control becomes increasingly difficult. This creates a new technology to CD control accurately. The technology utilizes intensity of light diffracted from latent image consisting of periodic patterns in undeveloped photoresist, and its possibility has been reported for several years. We have developed a new method of the CD control by monitoring profile of the latent image using atomic force microscope (AFM). The reduction of CD variation using this method is achieved by controlling development time from the relationship between the profile of the latent image and CD after development. We have tried to apply this method to a resist process in KrF excimer laser lithography and found usefulness of the method for 0.25 micrometers lithography.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Taichi Koizumi, Takahiro Matsuo, Masayuki Endo, and Masaru Sasago "CD control using latent image for lithography", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209226
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