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22 May 1995 Cycle-time reduction of CD targeting using automated metrology and analysis
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Abstract
This paper describes a technique for quickly achieving photolithography and etch critical dimension (CD) targets using measurement data from an automated CD SEM and a statistical analysis package. The experimental dataset is created from the measured CD response as a function of process input parameters that have been varied in a controlled fashion across a wafer or on multiple wafers. The resulting model is displayed as an array of "prediction profiles" that allow interactive variation of the model components to simulate the response of CD to input changes. The outputs of the analysis are used to determine optimal processing conditions and to provide an estimate of process latitude. Keywords: Automated CD SEM Metrology, Lithography Process Characterization
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard C. Elliott, Robert R. Hershey, and Kevin G. Kemp "Cycle-time reduction of CD targeting using automated metrology and analysis", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209214
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