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22 May 1995 Overlay measurements and standards
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Abstract
The relative misalignment of features produced by different mask levels (i.e., overlay error) is projected to become an increasingly important problem to the semiconductor industry as the size of critical features continues to decrease. In response to this need, NIST has initiated a two-step program to improve the measurement of overlay error, and to develop standards in support of overlay metrology. The approach of the first step is to develop a 'toolkit' of standards for characterizing the tool-induced shifts (TIS) in the optical tools presently used for the measurement of overlay error, with the aim of producing and maintaining overlay tools with negligible TIS. The second step, which necessarily follows the successful completion of the first step, is aimed at developing artifact standards with negligible wafer-induced shifts for the calibration of the TIS-free overlay tools.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard M. Silver, James E. Potzick, and Robert D. Larrabee "Overlay measurements and standards", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209209
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