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22 May 1995 Progress on accurate metrology of pitch, height, roughness, and width artifacts using an atomic force microscope
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Abstract
NIST personnel (J.S. and T.M.) visited 23 IC manufacturing companies and equipment suppliers during 1994 to determine semiconductor industry needs for scanned probe metrology. NIST has initiated projects addressing some of the need identified. When complete these projects will enable improved metrology using the scanned probe microscope. Industry needs include pitch, height, angle, and width calibration artifacts, and understanding of the effect of humidity on AFM measurements, and tip metrology techniques. To meet these needs we have designed and built a Calibrated Atomic Force Microscope (C-AFM) with interferometric position control. This AFM is capable of making accurate measurements. We present the operational characteristics of the instrument, accurate X, Y, and Z pitch measurements on a commercially available artifact, measurements on a prototype surface roughness artifact, and a promising technique by which to make accurate linewidth measurements.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason Schneir, Thomas H. McWaid, Ronald G. Dixson, Vincent Wen-Chieh Tsai, John S. Villarrubia, Ellen D. Williams, and E. Fu "Progress on accurate metrology of pitch, height, roughness, and width artifacts using an atomic force microscope", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209224
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