Impact of optical thin film effects on CD control in DUV lithography

Raymond A. Cirelli; Joseph G. Garofalo; Eric L. Raab; Jiabei Xiao; Robert John Socha; Sheila Vaidya

doi:10.1117/12.209289

26 May 1995 Impact of optical thin film effects on CD control in DUV lithography

Raymond A. Cirelli, Joseph G. Garofalo, Eric L. Raab, Jiabei Xiao, Robert John Socha, Sheila Vaidya

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209289
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

We examine the effects of optical thin films on CD control in DUV lithography. A number of different substrates typical of device lithography levels were fabricated. Film stack configurations were chosen for their optical properties as well as process integration compatibility. All wafers were then exposed with an open field to measure swing amplitude, followed by a resolution test pattern to measure proximity effect and dose latitude. The resolution test pattern consisted of 250 nm coded features varying in pitch from 500 to 1750 nm. Results will be presented for optimum CD control over four types of film stacks as a function of resist thickness. In general, it is always best to operate at an extremum of the swing curve in resist thickness. However, the underlying film stack effects the CD control differently at E_min versus E_max. We present the optimum exposure conditions for a number of film stacks, resist thickness, and types of illumination (conventional and annular). These results were corroborated by optical imaging software enhanced to incorporate resist thickness and thin film effects. A synopsis of the role of substrate optical properties on CD control will be presented.

Citation Download Citation

Raymond A. Cirelli, Joseph G. Garofalo, Eric L. Raab, Jiabei Xiao, Robert John Socha, and Sheila Vaidya "Impact of optical thin film effects on CD control in DUV lithography", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209289

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