Quantifying proximity and related effects in advanced wafer processes

John P. Stirniman; Michael L. Rieger; Robert E. Gleason

doi:10.1117/12.209257

26 May 1995 Quantifying proximity and related effects in advanced wafer processes

John P. Stirniman, Michael L. Rieger, Robert E. Gleason

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209257
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Proximity effect correction presumes that a significant proportion of CD variations observed in wafer lithography and processes can be systematically predicted from calculations made on a pattern layout prior to fabrication. Total shape variations include a portion that repeats from chip-to-chip and wafer-to-wafer, and a randomly varying portion. Repeating effects can be compensated by modifying feature shapes on the mask pattern. The project described in this report is a study to characterize the systematic shape distortions in an experimental 0.25 micrometers process. Analyses of variation are made to quantify dependencies on specific variation sources. Two-dimensional 'behavior models,' derived from characterization data measured from processed wafers, can be used to compute shape corrections for arbitrary pattern layouts. This project was undertaken in collaboration with the Hewlett Packard Research Laboratories, Palo Alto, CA.

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John P. Stirniman, Michael L. Rieger, and Robert E. Gleason "Quantifying proximity and related effects in advanced wafer processes", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209257

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