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26 May 1995 Study of optical proximity effects using off-axis illumination with attenuated phase shift mask
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Abstract
The global proximity effects of densed line, semi-isolated line are studied for conventional illumination, off-axis illumination, and finally off-axis illumination in combination with attenuated phase shift masks which have transmittance of 4% and 8%, respectively, by experiments and simulations. To analyze the behavior of proximity effects, the lithographic performances of the super resolution technique are investigated comparing the cross-sectional view of resist pattern profile, useful depth of focus, and the curves of linewidth vs. defocus for 0.30 micrometers , 0.35 micrometers , and 0.40 micrometers pattern size, respectively. The global proximity effect is quantitatively analyzed by fitting the curve for densed line and isolated line to 2nd order polynomials. Off- axis illumination with attenuated phase shift mask is very effective to minimize the proximity effects for the pattern size less than 0.40 micrometers , and have useful depth of focus of 1.0 micrometers for 0.30 micrometers patterns.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chang-Nam Ahn, Ki-Ho Baik, Yong-Suk Lee, Hung-Eil Kim, Ikboum Hur, YoungSik Kim, Ju-Hwan Kim, and Soo-Han Choi "Study of optical proximity effects using off-axis illumination with attenuated phase shift mask", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); doi: 10.1117/12.209254; https://doi.org/10.1117/12.209254
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