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26 May 1995 Subquarter micron optical lithography with practical superresolution technique
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Abstract
Practical resolution, which is defined as the minimum geometry for a 1.0 micrometers depth of focus, in conventional krypton fluoride (KrF) excimer laser (248 nm) lithography is 0.30 micrometers . A new illumination technique, which uses a weak quadruple effect to enhance the depth of focus and to solve the current problems in the off-axis illumination techniques, has been developed. This new illumination technique is suitable for use with the attenuated phase shifting mask. With this combination technique, a 1.8 micrometers depth of focus using a 0.45 NA KrF excimer laser stepper can be achieved without a secondary peak in the distribution of light intensity for the various duties 0.30 micrometers space patterns. Even for hole patterns, a 2.0 micrometers common depth of focus can be achieved. These results indicate that KrF excimer laser lithography is a powerful candidate for beyond 0.25 micrometers -rule devices. It is also confirmed that i-line lithography is an expectable candidate for the second generation of 0.35 micrometers -rule devices.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tohru Ogawa, Masaya Uematsu, Fumikatsu Uesawa, Mitsumori Kimura, Hideo Shimizu, and Tatsuji Oda "Subquarter micron optical lithography with practical superresolution technique", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209302
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