22 May 1995 Development of thin film TiNi/Pb(Zr,Ti)O3 heterostructures
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Abstract
Thin film layers of shape memory alloys and ferroelectric ceramics can produce a family of smart heterostructures capable of performing both sensing and actuating functions. Important issues in the synthesis of these active structures are the ability to generate the appropriate crystalline phases of each material while producing defect-free homogeneous high-quality films. The compatibility of sol-gel-processed Pb(Zr,Ti)O3 (PZT) thin films with thin film shape memory effect TiNi substrates were investigated Thin film TiNi was deposited on quartz substrates by physical sputter deposition utilizing a TiNi target in a ultrahigh-vacuum chamber, which was followed by in- site vacuum annealing. The ferroelectric tetragonal phase of PZT was deposited on TiNi by sol-gel and spin-coating processes followed by a 600 degree(s)C anneal for 5 m in air. The heterostructures obtained were nominally defect-free, unlike those obtained through deposition onto bulk TiNi substrates.
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Peter G. Mercado, Peter G. Mercado, A. Peter Jardine, A. Peter Jardine, } "Development of thin film TiNi/Pb(Zr,Ti)O3 heterostructures", Proc. SPIE 2441, Smart Structures and Materials 1995: Smart Materials, (22 May 1995); doi: 10.1117/12.209809; https://doi.org/10.1117/12.209809
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