Ultrasoft x-ray reflectometry methods was used to estimate an effect of surface technological treatments (mechanical and chemical polishing, laser annealing) on the atomic short-range order coordination of silicon atoms in the near surface region of SiO2-based glass. Reflection spectra fine structure in the vicinity of SiL2,3 ionization threshold for the different angles of incidence and the scattering indicatricies were measured. Analysis of the experimental data shows that polishing (both mechanical and chemical) leads to an appearance of the thin surface layer (thickness about 17 nm) characterized by (alpha) - quartz-like SiO4 tetrahedron distortions. A degree of distortion depends on treatment and is the largest after chemical polishing and the lowest (but noticeable) after laser annealing. Angular shift of the anomalous scattering peak position is interpreted as a result of the average surface layer mass density decreases after laser annealing.