8 March 1995 CO2 laser photosensitized decomposition of diethylsilane for deposition of SixC1-x coatings
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Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203524
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Abstract
CO2 laser photosensitized (SF6) decomposition of diethylsilane proceeds via molecular extrusion of ethene and affords solid Si/C/H materials which possess both Si-C and Si contributions, contain some fluorine from the sensitizing sulphur hexafluoride, and react with ambient atmosphere to incorporate oxygen.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Jakoubkova, Z. Bastl, J. Subrt, D. Cukanova, Radek Fajgar, Josef Pola, "CO2 laser photosensitized decomposition of diethylsilane for deposition of SixC1-x coatings", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203524; https://doi.org/10.1117/12.203524
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